... in chemical mechanical polishing (CMP), specifically, at edges of blanket wafers causing the edge effect or at edges and corners of protrusive features on patterned wafers inducing the doming effect; metal dishing and dielectric erosion. By controlling the evaporation profile of the solvent in the slurry...

...Kurt Beschorner; C. Fred Higgs, III; Michael Lovell Reynolds equation in polar cylindrical (polar) coordinates is used for numerous tribological applications that feature thin fluid films in sliding contacts, such as chemical mechanical polishing and pin-on-disk testing. Although unstated...

...Elon J. Terrell; C. Fred Higgs, III Chemical mechanical polishing (CMP) is a manufacturing process that is commonly used to planarize integrated circuits and other small-scale devices during fabrication. Although a number of models have been formulated, which focus on specific aspects of the CMP...

...Dinçer Bozkaya; Sinan Müftü In chemical mechanical polishing (CMP), a rigid wafer is forced on a rough elastomeric polishing pad, while a slurry containing abrasive particles flows through the interface. One of the important factors that influence the material removal rate in CMP is the magnitude...

...Dedy Ng; Hong Liang This research investigates the interfacial forces involved in tribological interactions while removing nanosized particles during post-chemical-mechanical polishing cleaning. Surface and interfacial forces are discussed to understand the particle adhesion and subsequent removal...

...Elon J. Terrell; C. Fred Higgs III Chemical mechanical polishing (CMP) is a manufacturing process in which a wafer surface is polished by pressing it against a rotating pad that is flooded with slurry. The slurry itself is a fluid containing abrasive particles. Past experimentation has shown...

... surface. A sequence of order-of-magnitude calculations is carried out to substantiate this mechanism of chemical-mechanical polishing (CMP) materials removal. The analysis may lend further credence to the mechanism in addition to its underlying theoretical foundation. chemical mechanical polishing...

...Jen Fin Lin; Sheng-Chao Chen; Yu Long Ouyang; Ming Shih Tsai An average Reynolds equation considering the effects of a pad’s annular grooves and surface roughness is developed in this study to examine mixed lubrication in the chemical mechanical polishing (CMP) of a copper-film silicon wafer...

... . Tomozawa , M. , 1997 , “ Oxide CMP Mechanisms ,” Solid State Technol. , pp. 169 – 175 . Zhang , F. , and Busnaina , A. , 1998 , “ The Role of Particle Adhesion and Surface Deformation in Chemical Mechanical Polishing Processes ,” Electrochem. Solid-State Lett. , 1 , pp. 184 – 187...

...Sum Huan Ng; C. Fred Higgs,, III; Inho Yoon; Steven Danyluk Pressure and shear flow factors (Patir and Cheng, 1978) were used to take into account the roughness of the pad surface in the modeling of the interfacial fluid pressure during chemical mechanical polishing. An attempt was made to explain...

...Yeau-Ren Jeng; Pay-Yau Huang Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based...

...Sum Huan Ng; Len Borucki; C. Fred Higgs, III; Inho Yoon; Andre´s Osorno; Steven Danyluk Previous experimental work has shown that negative fluid pressure does develop at the disk/pad interface during chemical mechanical polishing. However, these studies dealt with one-dimensional measurement...

... copper chemical mechanical polishing Young's modulus elastic deformation plastic deformation abrasion lubrication tribology surface topography rough surfaces silicon elemental semiconductors metallisation indentation sliding friction planarisation metallic thin films Chemical...

...Sum Huan Ng; Robert Hight; Chunhong Zhou; Inho Yoon; Steven Danyluk Prior work has shown that there exist a sub-ambient fluid pressure at the interface between a rigid flat and the polishing pad during chemical mechanical polishing (CMP). This sub-ambient fluid pressure can have a significant...

... the typical range of normal loads and velocities used in the chemical mechanical polishing/planarization of silicon wafers. The results show that, for most cases, the leading two-thirds of the fixture exhibits a subambient pressure, and the trailing third a positive pressure. The average pressure is sub...