Microwave plasma jet chemical vapor deposition is used to grow array types of carbon nanotubes and diamond films on silicon substrates. In this study, we report a patterned growth of carbon nanotubes and diamond films using the barrier layer method, wherein the selective areas vary from to . The field-emission measurement shows that the turn-on electric field for patterned carbon nanotubes and diamond films are and , respectively. Therefore, this method of site-selective growth of carbon nanotubes and diamond films can be applied to the production of field emitters.
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