The transient temperature field development during heating of an amorphous silicon (a-Si) film, deposited on a fused quartz substrate, by pulsed excimer laser irradiation is studied. Static reflectivity and transmissivity measurements are used to obtain the thin film optical properties at elevated temperatures. Experimental in-situ, transient, optical transmission data are compared with heat transfer modeling results. The variation with temperature of the material complex refractive index across the thin film thickness is taken into account. The effects of the film thickness and thermal diffusivity, as well as of the laser pulse shape, are discussed.

Issue Section:
Radiative Transfer
Keywords:
Laser Processing, Materials and Manufacturing Processes, Radiation Interactions
Topics:
Excimer lasers, Irradiation (Radiation exposure), Lasers, Silicon, Transients (Dynamics), Temperature, Thin films, Film thickness, Heat transfer, Heating, Manufacturing, Modeling, Quartz, Radiation (Physics), Reflectance, Refractive index, Shapes, Thermal diffusivity
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Copyright © 1993
 by The American Society of Mechanical Engineers
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