-doped ceria (GCO) is irreplaceable as interface/buffer layer between a mixed conducting cathode such as (LSCF) and an stabilized (8YSZ) thin film electrolyte. To meet the demands of high performance, indispensable characteristics of this interface (LSCF/GCO/8YSZ) are (i) no reaction of GCO with LSCF or YSZ and (ii) a GCO layer that is defect-free (closed porosity, no cracks). It is well known that state-of-the-art screen printed and sintered GCO buffer layers are imperfect and ultimately reduce the overall performance. This study concentrates on the evaluation of nanoscaled GCO thin films integrated into anode supported cells (ASC). GCO thin films were deposited on 8YSZ electrolyte by a low temperature metal organic deposition (MOD) process. MOD is preferable because it is a versatile technique for large scale and low cost fabrication for various material compositions. The authors investigated the influence of preparation parameters with respect to chemical homogeneity and film quality (pores, cracks) of GCO thin films with a constant film thickness between 50 nm and 100 nm. Electrochemical performance of anode supported cells employing MOD derived GCO thin films will be presented in terms of ohmic resistance and will be evaluated in contrast to screen printed and sintered GCO thick films. Nanoscale MOD derived thin films with low processing temperatures and dense film qualities were vastly superior to state-of-the-art GCO and beneficial to the overall cell performance.
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e-mail: cornelia.endler@kit.edu
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August 2011
This article was originally published in
Journal of Fuel Cell Science and Technology
Research Papers
Nanoscale Gd-Doped Buffer Layer for a High Performance Solid Oxide Fuel Cell
Cornelia Endler-Schuck,
Cornelia Endler-Schuck
Institut für Werkstoffe der Elektrotechnik (IWE),
e-mail: cornelia.endler@kit.edu
Karlsruher Institut für Technologie (KIT)
, Adenauerring 20b, DE-76131 Karlsruhe, Germany
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André Weber,
André Weber
Institut für Werkstoffe der Elektrotechnik (IWE),
Karlsruher Institut für Technologie (KIT)
, Adenauerring 20b, DE-76131 Karlsruhe, Germany
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Ellen Ivers-Tiffée,
Ellen Ivers-Tiffée
Institut für Werkstoffe der Elektrotechnik (IWE) and DFG Center for Functional Nanostructures (CFN),
Karlsruher Institut für Technologie (KIT)
, Adenauerring 20b, DE-76131 Karlsruhe, Germany
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Uwe Guntow,
Uwe Guntow
Fraunhofer Institute for Silicate Research (ISC)
, Neunerplatz 2, DE-97082 Würzburg, Germany
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Johannes Ernst,
Johannes Ernst
CeramTec AG
, Lorenzreuther Straße 2, DE-95615 Marktredwitz, Germany
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Jürgen Ruska
Jürgen Ruska
CeramTec AG
, Lorenzreuther Straße 2, DE-95615 Marktredwitz, Germany
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Cornelia Endler-Schuck
Institut für Werkstoffe der Elektrotechnik (IWE),
Karlsruher Institut für Technologie (KIT)
, Adenauerring 20b, DE-76131 Karlsruhe, Germanye-mail: cornelia.endler@kit.edu
André Weber
Institut für Werkstoffe der Elektrotechnik (IWE),
Karlsruher Institut für Technologie (KIT)
, Adenauerring 20b, DE-76131 Karlsruhe, Germany
Ellen Ivers-Tiffée
Institut für Werkstoffe der Elektrotechnik (IWE) and DFG Center for Functional Nanostructures (CFN),
Karlsruher Institut für Technologie (KIT)
, Adenauerring 20b, DE-76131 Karlsruhe, Germany
Uwe Guntow
Fraunhofer Institute for Silicate Research (ISC)
, Neunerplatz 2, DE-97082 Würzburg, Germany
Johannes Ernst
CeramTec AG
, Lorenzreuther Straße 2, DE-95615 Marktredwitz, Germany
Jürgen Ruska
CeramTec AG
, Lorenzreuther Straße 2, DE-95615 Marktredwitz, GermanyJ. Fuel Cell Sci. Technol. Aug 2011, 8(4): 041001 (5 pages)
Published Online: March 25, 2011
Article history
Received:
February 11, 2010
Revised:
July 27, 2010
Online:
March 25, 2011
Published:
March 25, 2011
Citation
Endler-Schuck, C., Weber, A., Ivers-Tiffée, E., Guntow, U., Ernst, J., and Ruska, J. (March 25, 2011). "Nanoscale Gd-Doped Buffer Layer for a High Performance Solid Oxide Fuel Cell." ASME. J. Fuel Cell Sci. Technol. August 2011; 8(4): 041001. https://doi.org/10.1115/1.4003016
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